• DocumentCode
    156335
  • Title

    Fractality as a new nanotechnological direction of semiconductor material science

  • Author

    Torkhov, N.A.

  • Author_Institution
    Sci. Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    663
  • Lastpage
    664
  • Abstract
    Studies have shown that in the local approximation, the behavior of electrical properties of semiconductor surfaces, interfaces, processes of current flow and charge transport, as well as the majority of technological processes on the nano-level satisfy all properties of chaotic systems. In the local approximation, the dependences of the electrophysical properties of objects and geometry of technological processes on the linear dimensions and fractional values of fractal dimensions allow making control of the properties of semiconductors and technological processes on the nano-level, which is a sign of a new nanotechnology direction in semiconductor material science. Unlike quantum effects, not only the energy properties of electron gas, but also almost all other physical properties of semiconductors obey the fractal regularities in the local approximation.
  • Keywords
    fractals; nanotechnology; semiconductor industry; semiconductor materials; charge transport; electron gas; fractality; local approximation; nanotechnological direction; semiconductor material science; semiconductor process; semiconductor surface; Fractals; Gallium nitride; HEMTs; TV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959576
  • Filename
    6959576