• DocumentCode
    156347
  • Title

    Technology of porous silicon dioxide films synthesis and their electrical properties

  • Author

    Sakharov, Yu.V. ; Troyan, P.E.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR), Tomsk, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    682
  • Lastpage
    683
  • Abstract
    This paper presents the synthesis technology and electrical properties of porous silicon dioxide films made by magnetron sputtering of the composite target (Si:C) in the oxygen atmosphere. Such method is fully compatible with the existing stages of integrated circuits production implemented in the majority of cases in vacuum conditions.
  • Keywords
    porous materials; silicon compounds; sputter deposition; thin films; SiO2; composite target; electrical properties; integrated circuit production stages; magnetron sputtering; oxygen atmosphere; porous silicon dioxide film synthesis; vacuum conditions; Dielectrics; Lead;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959583
  • Filename
    6959583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=156347