Electroplastic effect associated with the dislocation generation in the initially dislocation-free silicon whiskers

Author

Ermakov, A.P. ; Proskurin, D.K. ; Ermakov, S.A. ; Chernoyarov, O.V.

Author_Institution

Voronezh State Univ. of Archit. & Civil Eng., Voronezh, Russia

fYear

2014

fDate

7-13 Sept. 2014

Firstpage

692

Lastpage

693

Abstract

Experiments on local high-intensity electric current pulse effect on mechanical properties of silicon whiskers made it possible to reveal a novel type of electroplastic effect associated with the generation of dislocations. The procedure of electric current effect by single impulses on the siliconwhiskers of the having the highest specific strength from all investigated versions of shapes of a solid body is offered. The structure of crystals in an initial state and after the effect by single impulses of current of various density is investigated.

Keywords

crystal structure; dislocations; electromechanical effects; elemental semiconductors; mechanical strength; plasticity; silicon; whiskers (crystal); Si; crystal structure; dislocation generation; electroplastic effect; initial state; initially dislocation-free silicon whiskers; local high-intensity electric current pulse effect; mechanical properties; single impulses; solid body shapes; specific strength; Annealing; Creep; Organizing; Silicon; Strain; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-412-5

Type

conf

DOI

10.1109/CRMICO.2014.6959588

Filename

6959588