Title :
Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization
Author :
Boye, Carol A. ; Kelly, J.J. ; Canaperi, D.
Author_Institution :
IBM Corp., Albany, NY
Abstract :
The effects of various process parameters, including liner/seed deposition, electrodeposition process and chemistry, and CMP (chemical mechanical planarization), on the formation of void defects in 32 nm copper metallization was investigated using a KLA-Tencor brightfield defect detection system. Optimum process conditions were determined based on void defectivity levels.
Keywords :
chemical mechanical polishing; copper; electrodeposition; metallisation; brightfield defect detection system; chemical mechanical planarization; defectivity characterization; electrodeposition process; liner-seed deposition; metallization; post-CMP; process parameters; void defectivity levels; Additives; Chemistry; Copper; Filling; Manufacturing processes; Metallization; Planarization; Pulp manufacturing; Semiconductor device manufacture;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4529008
