DocumentCode :
156467
Title :
Single-electron transistor based on porous anodic alumina
Author :
Sokol, V.A. ; Yakovtseva, V.A.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
803
Lastpage :
804
Abstract :
The self-organized nano-sized porous anodic alumina films filled with metal are discussed for multiple-island single-electron transistors operated at room temperature. The proposed approach allows multiple-island single-electron transistors being simultaneously fabricated over the whole wafer area and even on a wafer lot by batch manufacturing like conventional semiconductor integrated circuits.
Keywords :
alumina; monolithic integrated circuits; porous semiconductors; single electron transistors; multiple-island single-electron transistors; self-organized nanosized porous anodic alumina films; semiconductor integrated circuits; Heating; Logic gates; Metals; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959639
Filename :
6959639
Link To Document :
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