Title :
The resonant-emission diode on a nitride gallium cathode with single-layer cathode coating
Author :
Goncharuk, N.M. ; Karushkin, N.F.
Author_Institution :
Res. Inst. “Orion”, Kiev, Ukraine
Abstract :
A presence of resonant electron emission of GaN micro-cathode with AlGaN single-layer coating at certain parameters of the coating and electric field have been shown and negative conductance of a diode based on the emission is obtained. Dependence of frequency spectrum of negative conductance on cathode coating parameters is investigated. Parameters of the diode with negative conductance in terahertz frequency range has been found and optimized.
Keywords :
III-V semiconductors; aluminium compounds; cathodes; coatings; diodes; electron field emission; gallium compounds; wide band gap semiconductors; GaN-AlGaN; electric field; frequency spectrum; microcathode; negative conductance; nitride gallium cathode; resonant electron emission diode; single-layer cathode coating; single-layer coating; terahertz frequency; Gallium nitride;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959646
