Title :
Resistivity measurement of epitaxially grown silicon layers: The influence of native oxide growth
Author :
Bitzer, Th ; Baumgartl, J. ; Krzych, G. ; Tsidilkovski, E.
Author_Institution :
Infineon Technol., Villach
Abstract :
A four-point probe is commonly used to measure sheet resistance of epitaxial Si layers. Our studies show that measurement repeatability of the sheet resistance of 7 mum thick Si layers is strongly reduced due to the presence of interface-trapped charges. We demonstrate that the ac-surface photo-voltage method combined with the photo-oxidation and corona charging techniques results in an excellent measurement repeatability of specific resistivity.
Keywords :
corona; elemental semiconductors; epitaxial growth; silicon; ac-surface photvoltage method; corona charging techniques; epitaxially grown silicon layers; four-point probe; interface-trapped charges; measurement repeatability; native oxide growth; photooxidation charging techniques; resistivity measurement; sheet resistance; Conductivity measurement; Current measurement; Electrical resistance measurement; Epitaxial layers; Probes; Silicon; Substrates; Thickness measurement; Time measurement; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4244-1964-7
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2008.4529075
