DocumentCode
1566426
Title
Magnetic aftereffects in Si-doped YIG
Author
Torres, C. ; Alejos, O. ; Hernandez-Gomez, P. ; Munoz, J.M. ; de Francisco, C.
Author_Institution
Dept. de Electr. y Electron., Valladolid Univ., Spain
fYear
2002
Abstract
Summary form only given. Magnetic aftereffect (MAE) phenomena in yttrium iron garnet (YIG) with silicon substitutions have been analyzed by means of magnetic disaccommodation (DA) techniques. These studies provide important information about lattice symmetry and domain wall dynamics. Thus, they result very useful for a material as YIG whose properties change significantly through the addition of a wide variety of dopants.
Keywords
crystal symmetry; garnets; magnetic aftereffect; magnetic domain walls; silicon; yttrium compounds; Si-doped YIG; YFe5O12:Si; YIG:Si; domain wall dynamics; dopants; lattice symmetry; magnetic aftereffects; magnetic disaccommodation; yttrium iron garnet; Annealing; Atmosphere; Atmospheric measurements; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Perpendicular magnetic anisotropy; Soft magnetic materials; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
0-7803-7365-0
Type
conf
DOI
10.1109/INTMAG.2002.1000902
Filename
1000902
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