DocumentCode
1566491
Title
A novel silicon micron amperometric gas sensor
Author
Maseeh, F. ; Tierney, M.J. ; Chu, W.S. ; Joseph, J. ; Kim, H.-O.L. ; Otagawa, T.
Author_Institution
Teknekron Sensor Dev. Corp., Menlo Park, CA, USA
fYear
1991
Firstpage
359
Lastpage
362
Abstract
The authors report on a silicon-based amperometric microelectrochemical gas sensor, based on an innovative design. This sensor shows a faster response (<0.5 s) to NO gas than other types of gas sensors, with good repeatability. Because the substrate is made porous only on the working electrode, the bulk of the substrate can be rather thick to support the very thin silicon porous membrane. The thin membrane allows a shorter and therefore quicker diffusion path to the electrode compared to, for example, thicker porous ceramic substrates which have tortuous path pores. Response and recovery times are therefore reduced over back-cell sensors based on porous ceramic sensors. A detection limit of 5 p.p.m. was achieved for the first generation of these sensors.<>
Keywords
electric sensing devices; elemental semiconductors; gas sensors; integrated circuit technology; nitrogen compounds; semiconductor technology; silicon; NO gas; Si; diffusion; microelectrochemical gas sensor; micron amperometric gas sensor; porous membrane; porous substrate; recovery times; working electrode; Amperometric sensors; Biomembranes; Delay; Electrodes; Gas detectors; Gases; Liquids; Polymers; Sensor phenomena and characterization; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.148884
Filename
148884
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