Title :
Fabrication of ferromagnetic tunnel junctions in 10-nm sizes by using inorganic resist process
Author :
Wada, T. ; Haraichi, S. ; Sato, A. ; Fukushima, A.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
Abstract :
Summary form only given. We report the fabrication of ferromagnetic-insulator-ferromagnetic (FIF) tunnel junctions in 10-nm sizes by using Si-based inorganic electron beam resist process. We also report the electrical characteristics of these junctions.
Keywords :
cobalt; cobalt compounds; electron resists; ferromagnetic materials; magnetic tunnelling; magnetoresistive devices; nickel; 10 nm; FIF tunnel junctions; Ni-CoO-Co; SiO/sub 2/-Si; electrical characteristics; ferromagnetic-insulator-ferromagnetic tunnel junctions; inorganic resist process; Fabrication; Resists;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001030
