• DocumentCode
    1569737
  • Title

    Emerging non-volatile memory technologies: From materials, to device, circuit, and architecture

  • Author

    Hai Li ; Yiran Chen

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Polytech. Inst. of NYU, Brooklyn, NY, USA
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The emerging nonvolatile memory technologies are gaining significant attentions from semiconductor in recent years. Multiple promising candidates, such as phase change memory, magnetic memory, resistive memory, and memristor, have gained substantial attentions and are being actively pursued by industry. In this paper, we will give a 360 degree introduction on emerging non-volatile memory technologies by using spin-transfer torque random access memory (STT-RAM) as an example. The discussion includes process technology, device modeling, design considerations, and architecture in future computing systems.
  • Keywords
    magnetic storage; memristors; phase change memories; semiconductor device models; STT-RAM; design considerations; device modeling; magnetic memory; memristor; nonvolatile memory technology; phase change memory; process technology; resistive memory; spin-transfer torque random access memory; Circuits; Magnetic materials; Magnetic memory; Memristors; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Semiconductor materials; Torque;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
  • Conference_Location
    Seattle, WA
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4244-7771-5
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2010.5548590
  • Filename
    5548590