Title :
Magnetoresistance in exchange-biased IrMn/NiFe/FeMn
Author :
Guo, Z.B. ; Qiu, J.J. ; Zheng, Y.K. ; Han, G.C. ; Li, K.B. ; Luo, P. ; Wu, Y.H.
Author_Institution :
Data Storage Inst., Nat. Univ. of Singapore, Singapore
Abstract :
Summary form only given. Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250/spl deg/C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155/spl deg/C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.
Keywords :
Permalloy; coercive force; exchange interactions (electron); iridium alloys; magnetic domain walls; magnetic multilayers; magnetoresistance; manganese alloys; 155 degC; 250 degC; 5 to 80 nm; IrMn-NiFe-FeMn; coercivity; exchange bias; films; magnetic domain walls; magnetization; magnetoresistance; Anisotropic magnetoresistance; Annealing; Conductivity; Electrical resistance measurement; Extraterrestrial measurements; Magnetic domain walls; Magnetic field measurement; Magnetic fields; Magnetization; Magnetostriction;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001196
