Title :
Overall performance of spin-valves using CoFe/Cu/CoFe as free FM layers
Author :
Li, K.B. ; Wu, Y.H. ; Guo, Z.B. ; Qiu, J.J. ; Han, G.C.
Author_Institution :
Data Storage Inst., Singapore, Singapore
Abstract :
Summary form only given. Significant improvement of MR ratio can be realized in specular spin-valves (SVs) either by adding one noble metal layer used as spin-filter layer or by inserting nano-oxide layers both in the free and pinned FM layers. We have investigated the effect of using CoFe/Cu/CoFe as the free FM layer on the overall properties of SVs, such as, the change of sheet resistance (/spl Delta/R/sub s/), the MR ratio, and the interlayer coupling field (H/sub int/) etc. The structure of SVs studied was: Ta/NiFe/IrMn/CoFe(t/sub 1/)/Cu/CoFe/Cu/CoFe/Ta. We find that the MR ratio increases with increasing t/sub 1/ and is almost saturated when t/sub 1/, is larger than 1nm. These effects become more notable when the surface roughness at the interface is improved. This will be addressed in detail.
Keywords :
cobalt alloys; copper; exchange interactions (electron); ferromagnetic materials; interface roughness; magnetoresistance; spin valves; surface resistance; 1 nm; MR ratio; Ta-NiFe-IrMn-CoFe-Cu-CoFe-Cu-CoFe-Ta; free FM layers; interlayer coupling field; sheet resistance; spin-valves; surface roughness; Data engineering; Drives; Electron traps; Gases; Memory; Oxidation; Rough surfaces; Scattering; Space exploration; Spin valves;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001235
