Design of a 3.1–10.6 GHz CMOS UWB LNA with a new structure

This paper introduces an ultra-wideband low noise amplifier (UWB LNA) with a new structure. The circuit for ultra-wideband wireless communication system receiver front end is based on TSMC 0.18-μm CMOS technology. In 3.1 ~ 10.6 GHz its simulation results are as follow: the input return loss (S11) is less than -13.4 dB, the output return loss (S22) is less than -12.4 dB, the maximum gain (S21) is 17 dB, the reverse isolation (S12) is less than -50 dB, the minimum noise figure NF is 4 dB, the maximum of input third order intermodulation point (IIP3) is about -5.3 dBm, the power consumption of the circuit is about 9 mW under 1.5 V operating voltage. This design of UWB LNA has advantage of wide working bandwidth, high gain, low power consumption, good noise performance, high linearity, excellent input and output impedance matching.