Title :
Stable above-threshold linewidth enhancement factor in a 1.52-μm InAs/InP (311B) quantum dot laser
Author :
Grillot, F. ; Martinez, A. ; Merghem, K. ; Provost, J.G. ; Alexandre, F. ; Piron, R. ; Dehaese, O. ; Loualiche, S. ; Lester, L.F. ; Ramdane, A.
Abstract :
The alphaH-factor behavior with current is investigated in a 1.52 mum InAs/InP (311B) QD laser. It is shown that due to low gain compression effects, no divergence of the alphaH-factor occurs unlike 1.3 mum InAs/GaAs QD lasers.
Keywords :
III-V semiconductors; indium compounds; quantum dot lasers; InAs-InP; above-threshold linewidth enhancement factor; gain compression effects; quantum dot laser; wavelength 1.52 mum; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laser feedback; Laser stability; Optical materials; Optical waveguides; Quantum dot lasers; Threshold current; Waveguide lasers;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688728
