Thermal processing of labile materials: a kinetic approach

Author

Ziger, David H. ; Wolk, Gary L.

Author_Institution

AT&T Bell Lab., Princeton, NJ, USA

fYear

1988

Firstpage

85

Lastpage

88

Abstract

A simple Arrhenius approach to thermal processing of labile semiconductor resist materials is proposed which compensates for nonisothermal heat treatments, run-to-run thermal variations, and batch-loading effects. This technique was successfully used to control a photoresist resolution-enhancement process known as image reversal. By applying kinetic control to ammonia-catalyzed image-reversal processing, it was possible to extend minimum resolution to 0.5 mu m and 0.6 mu m linear features using g-line projection optics with 0.42 and 0.35 NA (numerical aperture) lenses, respectively.<>

Keywords

heat treatment; photoresists; 0.5 micron; 0.6 micron; Arrhenius approach; batch-loading effects; g-line projection optics; image reversal; kinetic approach; labile materials; nonisothermal heat treatments; numerical aperture; photoresist resolution-enhancement process; run-to-run thermal variations; Automatic control; Kinetic theory; Lithography; Optical films; Process control; Resists; Semiconductor materials; Solvents; Temperature control; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1988, Design-to-Manufacturing Transfer Cycle. Fifth IEEE/CHMT International

Conference_Location

Lake Buena Vista, FL, USA

Type

conf

DOI

10.1109/EMTS.1988.16154

Filename

16154