Substrate dependent high-field transport of graphene transistors

The performance of graphene field-effect transistors (GFETs) strongly depends on the interfaces between the graphene layer and the supporting and top gate dielectrics. In this study, we combine our simulation approach [1] with new and existing experimental data to provide the first detailed analysis and comparison of the high-field properties of graphene on BN [2], on HfO₂ (examined here for the first time) and on SiO₂ [3]. These substrates each present unique scenarios because they have different (remote) phonons and different thermal conductivities, all of which influence high-field transport in GFETs.