DocumentCode :
1574166
Title :
Double diode modeling of time/temperature induced degradation of solar cells
Author :
Junsangsri, Pilin ; Lombardi, Fabrizio
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fYear :
2010
Firstpage :
1005
Lastpage :
1008
Abstract :
This paper presents a simulation-based analysis of degradation of a solar cell as induced by temperature and/or time. Based on the double diode model (DDM) and using HSPICE, relationships are found between the parameters of the equivalent electrical circuit and efficiency, process variations and optimization in its operation. The results of this paper show that time, temperature and irradiance are of significance in DDM, because they affect the efficiency of a solar cell when degradation occurs.
Keywords :
power engineering computing; solar cells; HSPICE; double diode modeling; equivalent electrical circuit; process variations; simulation-based analysis; solar cells; time-temperature induced degradation; Circuit simulation; Contact resistance; Degradation; Diodes; Distributed decision making; Equivalent circuits; Photovoltaic cells; Surface resistance; Temperature; Voltage; Degradation; PV model; Solar cells; equivalent circuit; temperature; time;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
ISSN :
1548-3746
Print_ISBN :
978-1-4244-7771-5
Type :
conf
DOI :
10.1109/MWSCAS.2010.5548809
Filename :
5548809
Link To Document :
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