Zinc oxide ring oscillators with vertical thin film transistors

Metal oxide semiconductors have given new life to the field of thin film electronics by exhibiting high performance for relatively low process temperatures, especially compared to amorphous silicon. In some cases, the fact that standard processing techniques can be used with these materials is an advantage because they can “drop-in” to existing facilities¹, and adoption in the large-area display backplane arena is underway.In this report we present oxide-based vertical thin film transistor (VTFT) circuits with alignment tolerances of tens of microns, and operation below 6 V.