DocumentCode :
15758
Title :
Optical Modeling-Assisted Characterization of Polymer:Fullerene Photodiodes
Author :
Jun Hyung Jo ; Yong-Sik Chun ; Ilgu Kim
Author_Institution :
Sch. of Inf. & Commun. Technol., Griffith Univ., Griffith, QLD, Australia
Volume :
6
Issue :
4
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1
Lastpage :
7
Abstract :
In this paper, the practical viability of an organic bulk heterojunction (BHJ)based photodiode is studied, including the analysis of dark current density (Jd in A/cm2), external quantum efficiency (EQE in percent), responsivity (R in A/W), noise-equivalent power (in W/Hz1/2), and specific detectivity (Jones in cmHz1/2/W). The dark current was minimized down to 90 pA/cm2 in P3HT : PC60BM BHJ photodiodes by increasing the thickness, whereas the EQE maintained high values. The measured noise current was 2:20 χ 10-13, 1:13 χ 10-13, and 1:94 χ 10-14 A/Hz1/2 for 45-, 55-, and 65-nm BHJ photodiodes, respectively. With those values, the calculated detectivity obtained, given light of a 550 nm wavelength, was 2:55 χ 1011, 5:93 χ 1011, and 4:16 χ 1012 Jones, respectively. The results demonstrated a performance of polymer:fullerence photodiode near equivalent to that of Si-based photodiodes.
Keywords :
dark conductivity; fullerene devices; integrated optoelectronics; optical polymers; organic semiconductors; photodiodes; semiconductor heterojunctions; BHJ; C; EQE; dark current density; external quantum efficiency; noise current; noise-equivalent power; optical modeling; organic bulk heterojunction; polymer:fullerene photodiodes; responsivity; size 45 nm to 65 nm; specific detectivity; Current measurement; Dark current; Optical imaging; Optical polymers; Photodiodes; Organic materials; modeling; optical and other properties; optoelectronics materials; semiconductor materials;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2014.2345881
Filename :
6872783
Link To Document :
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