• DocumentCode
    1576832
  • Title

    Dynamic response of amorphous In-Ga-Zn-O thin-film transistors for 8K×4K flat-panel display

  • Author

    Rui Zhang ; Linsen Bie ; Yu, Elaine ; Kanicki, J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, for the first time, we report on the dynamic characteristics of the bottom-gate a-IGZO TFTs. Experiment results obtained for a-IGZO TFT are compared to conventional hydrogenated amorphous silicon (a-Si:H) TFTs.
  • Keywords
    amorphous semiconductors; dynamic response; gallium compounds; indium compounds; thin film transistors; zinc compounds; 8Kx4K flat-panel display; InGaZnO; amorphous In-Ga-Zn-O thin-film transistors; bottom-gate a-IGZO TFT; dynamic characteristics; dynamic response; Capacitance; Capacitors; Logic gates; Semiconductor device measurement; Testing; Thin film transistors; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633891
  • Filename
    6633891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1576832