Dramatic reduction of plasma induced damage using 2-step power down method in metal etch process

Author

Jung, Jong-wan ; Song, Byung-Sung ; Nam, Ki-Wuk ; Ha, Sang-Wuk ; Kim, Dae-Byung

Author_Institution

Hyundai Micro Electron. Co. Ltd., Cheongju, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

476

Lastpage

479

Abstract

For the first time it is shown that charging damage during RF power turn-off is as severe as steady state charging in both MERIE and ICP system. A newly proposed 2-step power down method dramatically reduced the charging damage during rf power turn-off. Moreover this method has shown highly reproducible results

Keywords

VLSI; integrated circuit reliability; integrated circuit testing; sputter etching; RF power turn-off; VLSI; charging damage; metal etch process; plasma etching; plasma induced damage; reproducible results; steady state charging; two-step power down method; Couplings; Etching; Inductors; Magnetic fields; Manufacturing processes; Plasma applications; Plasma materials processing; Silicon; Steady-state; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820974

Filename

820974

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1577584