Title :
Raman measurement methods for strain and subsurface damage down to 0.1 μm
Author_Institution :
Transducer Syst. Div., Renishaw plc, Wotton-under-Edge, UK
fDate :
11/30/1995 12:00:00 AM
Abstract :
Raman measurements are becoming routine for process lines and quality control. Their application to microstructures is clear for strain and defect analysis. Mapping by point or line scan provides an excellent picture of potential design faults or failure analysis. Fast direct 2-D Raman imaging has proved itself for fast defect, contaminant analysis on process lines. Spatial resolutions down to 0.1 μm coupled with good wavenumber stability are now possible, opening new areas of fundamental research
Keywords :
Raman spectroscopy; crystal defects; micromachining; micromechanical devices; nondestructive testing; semiconductor technology; semiconductors; strain measurement; surface contamination; surface structure; 0.1 micron; GaAs; Raman measurement methods; Si; contaminant analysis; defect analysis; etching; fast direct 2-D Raman imaging; microstructures; multilayer structures; nondestructive measurement; process lines; semiconductor structures; single grating systems; strain analysis; strain maps; subsurface damage;
Conference_Titel :
Methods of Materials Measurement in Microengineering, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19951468
