18-26 GHz low-noise amplifiers using 130- and 90-nm bulk CMOS technologies

Author

Shin, Shih-Chieh ; Lai, Szu-Fan ; Lin, Kun-You ; Tsai, Ming-Da ; Wang, Huei ; Chang, Chih-Sheng ; Tsai, Yung-Chih

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

Firstpage

47

Lastpage

50

Abstract

Two 18-26 GHz CMOS low-noise amplifiers using 130- and 90-nm bulk CMOS technologies are described in this paper. The thin-film microstrip (TFMS) LNA using a 130-nm CMOS process demonstrates a peak gain of 12.9 dB at 21 GHz with 3-dB bandwidth of 18.6 to 26.3 GHz and a noise figure (NF) of better than 5.4 dB between 20 and 26 GHz. The coplanar waveguide (CPW) amplifier fabricated by a 90-nm CMOS process presents a peak gain of 16.2 dB with a 3-dB bandwidth of 18 to 26 GHz, and a NF of better than 4 dB from 18 to 26 GHz.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; coplanar waveguide components; microstrip circuits; 12.9 dB; 130 nm; 16.2 dB; 18 to 26 GHz; 4 dB; 5.4 dB; 90 nm; CPW; TFMS; bulk CMOS technologies; coplanar waveguide amplifier; low-noise amplifiers; thin-film microstrip LNA; Bandwidth; CMOS process; CMOS technology; Coplanar waveguides; Gain; Low-noise amplifiers; Microstrip; Noise figure; Noise measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489489

Filename

1489489