• DocumentCode
    1583596
  • Title

    An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with RuO2/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs

  • Author

    Yamamichi, S. ; Lesaicherre, P.-Y. ; Yamaguchi, H. ; Takemura, K. ; Sone, S. ; Yabuta, H. ; Sato, K. ; Tamura, T. ; Nakajima, K. ; Ohnishi, S. ; Tokashiki, K. ; Hayashi, Y. ; Kato, Y. ; Miyasaka, Y. ; Yoshida, M. ; Ono, H.

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1995
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    A high dielectric constant (Ba,Sr)TiO3 [BST] based stacked capacitor with new RuO2/Ru/TiN/TiSix storage nodes was developed for Gbit-scale DRAMs. Good insulating BST films with a small teq of 0.65 nm on the electrode sidewalls were obtained by ECR MOCVD. The four-layer storage node allows 500°C processing and fine-patterning down to 0.20 μm by EB lithography and RIE. A cell capacitance of 25 fF in 0.125 μm2 is achieved using 0.3 μm-high storage electrodes for 1 Gbit DRAMs
  • Keywords
    DRAM chips; barium compounds; capacitors; dielectric thin films; integrated circuit technology; plasma CVD coatings; strontium compounds; 0.20 micron; 1 Gbit; 25 fF; 500 C; BaSrTiO3; DRAM; EB lithography; ECR MOCVD; RIE; RuO2-Ru-TiN-TiSi; dielectric constant; four-layer storage node; insulating BST film; oxide equivalent thickness; stacked capacitor technology; Binary search trees; Capacitors; Electrodes; Etching; High-K gate dielectrics; MOCVD; Material storage; National electric code; Plasma applications; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.497196
  • Filename
    497196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1583596