Title :
Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation
Author :
Chai, Francis K. ; Schrimpf, R.D. ; Brews, J.R. ; Birnie, D.P., III ; Galloway, K.F. ; Vogt, R.N. ; Orr, M.N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation
Keywords :
doping profiles; fatigue; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; leakage currents; niobium; piezoceramics; reliability; thin film capacitors; 3 micron; Nb doping level; PZT film thickness scaling; PZT:Nb; PbZrO3TiO3:Nb; electrical properties; fatigue; ferroelectric memory cells; ferroelectric thin film capacitor; leakage current; memory operation; reliability; storage element; Capacitors; Doping; Ferroelectric films; Ferroelectric materials; Hysteresis; Material storage; Niobium; Polarization; Semiconductor process modeling; Transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497197
