DocumentCode
1584087
Title
High-transconductance GaN MODFETs
Author
Aktas, ö ; Kim, W. ; Fan, Z. ; Stengel, F. ; Botchkarev, A. ; Salvador, A. ; Sverdlov, B. ; Mohammad, S.N. ; Morkoç, H.
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fYear
1995
Firstpage
205
Lastpage
208
Abstract
Current-voltage (I-V) characteristics of both normally-on and normally-off AlGaN-GaN MODFETs have been presented. The sheet carrier concentration of GaN used for the fabrication of these devices is significantly high. Both normally-on and normally-off devices exhibit high transconductance gm. For normally-on devices with 4 μm gate length, gm=72 mS/mm at T=300 K; for normally-off devices with 3 μ gate length gm=120 mS/mm at T=300 K. The devices were observed to operate at high temperatures up to T=300°C
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; 120 mS/mm; 3 micron; 300 C; 4 micron; 72 mS/mm; AlGaN-GaN; HEMT; I-V characteristics; MODFET; high temperature operation; high-transconductance devices; sheet carrier concentration; Electron mobility; Fabrication; Gallium nitride; HEMTs; Laboratories; MODFETs; Photonic band gap; Temperature; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.497215
Filename
497215
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