Title :
A simple state-based prognostic model for predicting remaining useful life of IGBT power module
Author :
Alghassi, Alireza ; Perinpanayagam, Suresh ; Jennions, I.K.
Author_Institution :
IVHM Center, Cranfield Univ., Milton Keynes, UK
Abstract :
Health management and reliability are fundamental aspects of the design and development cycle of power electronic products. This paper presents the prognostic evaluation of a power electronic IGBT module. To achieve this aim, a simple state-based prognostic (SSBP) method has been introduced and applied on the data which was extracted from an aged power electronic IGBT and its remaining useful life was determined.
Keywords :
insulated gate bipolar transistors; reliability; remaining life assessment; SSBP method; power electronic IGBT module; prognostic evaluation; remaining useful life prediction; simple state-based prognostic method; state-based prognostic model; Hidden Markov models; Insulated gate bipolar transistors; Mathematical model; Prognostics and health management; Reliability; Temperature measurement; IGBT; Prognosis; Reliability; SSBP;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634482
