Title :
Interfacing of silicon-on-insulator nanophotonic circuits to the real world
Author :
Wosinski, Lech ; Wang, Zhechao ; Tang, Yongbo
Author_Institution :
R. Inst. of Technol. (KTH), Kista, Sweden
Abstract :
Silicon-on-insulator material structure allows for very high light confinement in the silicon core due to its high refractive index. The advantages of this technology include the possibility to miniaturize devices and integrate different functions on a single chip, reduction of optical loss and power consumption and potential perspectives for low cost mass production in CMOS technology line. Together with these advantages some new problems appear in comparison to weakly guided light in silica-on-silicon components, causing additional challenges for researchers to be solved. Besides much higher demands for fabrication accuracy, high refractive index contrast introduces additional optical input/output coupling problems as well as much higher polarization sensitivity of nanophotonic structures. Here we will propose some solutions for these problems and illustrate them with designed and fabricated components.
Keywords :
CMOS integrated circuits; integrated optics; nanophotonics; optical couplers; optical losses; refractive index; silicon-on-insulator; CMOS technology line; coupling system; low cost mass production; material structure; nanophotonic circuit; nanophotonic structure; optical input/output coupling; optical loss; photonic integrated circuit; polarization sensitivity; power consumption; refractive index; silica-on-silicon component; silicon wire; silicon-on-insulator; single chip; CMOS technology; Circuits; Integrated optics; Optical devices; Optical materials; Optical refraction; Optical sensors; Optical variables control; Refractive index; Silicon on insulator technology; Nanophotonics; coupling systems; photonic integrated circuits; silicon integration; silicon on insulator; silicon wire waveguides;
Conference_Titel :
Transparent Optical Networks (ICTON), 2010 12th International Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-7799-9
Electronic_ISBN :
978-1-4244-7797-5
DOI :
10.1109/ICTON.2010.5549268