Title :
The development of a 150°C IRED
Author :
Vineyard, Ramond ; Stevens, Him
Author_Institution :
Clairex Technol. Inc., USA
Abstract :
Commercially available IREDs (infrared emitting diodes) manufactured with Si-doped, amphoteric junction gallium aluminum arsenide are typically derated to zero output at 125°C. This paper details the development of a high quantum efficiency IRED capable of operating reliably at 20 mA forward current at 150°C ambient temperature. The new product combines a double, double heterojunction die mounted on a dimpled TO-46 header and hermetically sealed with a double aspheric lens can
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; light emitting diodes; semiconductor device packaging; semiconductor device reliability; 150 C; 20 mA; GaAlAs:Si; IR LED; amphoteric junction; burn-in testing; commercially available IREDs; dimpled TO-46 header; double aspheric lens can; double heterojunction die; hermetically sealed package; high quantum efficiency; infrared emitting diodes; Degradation; III-V semiconductor materials; Lenses; Manufacturing; Optical devices; Optical feedback; Semiconductor diodes; Servomotors; Temperature; Thermal management;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676781
