DocumentCode :
1586822
Title :
Long term behavior of passive components for high temperature applications-an update
Author :
Grzybowski, Richard R.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fYear :
1998
Firstpage :
207
Lastpage :
214
Abstract :
The goal of this paper is to present updated information that demonstrates the viability of a significant number of commercially available passive components and SOI integrated circuits that operate at elevated temperatures. Performance data versus temperature obtained from both digital and analog ICs developed at Honeywell SSEC was presented. Characterization data obtained from capacitors, with a number of substantially different dielectric families represented, was presented. Capacitance values versus temperature as well as versus time at temperature substantiated the claim that components capable of operating in high temperature applications were commercially available. Resistors were examined in the same fashion. This information should encourage designers to consider innovative approaches to tough technical problems that involve harsh environments and higher temperatures than have been encountered in the past. Furthermore, the authors want to encourage component suppliers to optimize some of their product offerings for operation at higher temperatures for these applications. Finally, even a high reliability application that does not require high temperature operation will benefit from the use of components designed to operate at higher temperatures because of the inherent additional reliability achievable from devices that are designed and packaged to operate at high temperatures
Keywords :
MOS integrated circuits; high-temperature electronics; passive networks; reliability; silicon-on-insulator; Honeywell SSEC; SOI integrated circuits; capacitance values; harsh environments; high reliability application; high temperature applications; long-term behaviour; packages; passive components; resistors; Aerospace electronics; Capacitors; Crystals; Dielectrics; Military aircraft; Nuclear electronics; Paramagnetic resonance; Resistors; Temperature dependence; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
Type :
conf
DOI :
10.1109/HITEC.1998.676788
Filename :
676788
Link To Document :
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