• DocumentCode
    1587393
  • Title

    (SiC)1-x(AlN)x solid solutions-new materials of high-temperature electronics

  • Author

    Safaraliev, G.K. ; Nurmagomedov, S.A. ; Kurbanov, M.K. ; Ofitcerova, N.V.

  • Author_Institution
    Daghestan State Univ.
  • fYear
    1998
  • Firstpage
    313
  • Lastpage
    317
  • Abstract
    The study of electrical and luminescent properties of heterostructure on the basis of (SiC)1-x(AlN)x solid solutions are discussed in this article
  • Keywords
    aluminium compounds; high-temperature electronics; photoluminescence; silicon compounds; solid solutions; (SiC)1-x(AlN)x solid solutions; SiC-AlN; electrical properties; heterostructure; high-temperature electronics; luminescent properties; photoluminescence; Charge carriers; Current density; Heterojunctions; Leakage current; Silicon carbide; Solids; Temperature dependence; Temperature measurement; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676811
  • Filename
    676811
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1587393