Title :
Thermal cycling study of SiC BGJFETs
Author :
Rozario, Lisa V. ; Sadwick, Laurence P. ; Hwu, R. Jennifer ; King, Donald B.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
A thermal cycling study of 6H-SiC buried gate JFETs (BGJFETs) was conducted. These n-channel depletion mode (normally on) BGJFETs employed a buried p-n junction as the gate and mesa-epitaxial structures with 6H-SiC(0001) substrates and p- and n-epilayers. The gate contact metal, Ni-Al, was ohmic to the buried gate layer. A large number of devices (more than one hundred) were tested to study the trend of the device behavior at high temperatures. After constant temperature tests, thermal-cycling was done on the good devices
Keywords :
junction gate field effect transistors; semiconductor device testing; semiconductor materials; silicon compounds; 6H-SiC buried gate JFETs; Ni-Al; SiC; SiC BGJFET thermal cycling study; buried gate layer; buried p-n junction; constant temperature tests; device behavior; gate contact metal; high temperatures.; mesa-epitaxial structures; n-channel depletion mode; normally on; thermal-cycling; Cities and towns; Current measurement; Diodes; JFETs; Leakage current; Silicon carbide; Temperature measurement; Testing; Thermal degradation; Transconductance;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676815
