Characterization of high-voltage SiC MOSFETs under UIS avalanche stress

In this work, the capability of high-voltage SiC MOSFETs to dissipate energy during avalanche breakdown under single-pulse UIS (Unclamped Inductive Switching) test condition at high temperatures is assessed. And the degradation has also been identified under repetitive-pulse avalanche stress condition, by means of monitoring three crucial parameters, namely gate threshold voltage, drain leakage current and body diode forward voltage at regular pulse intervals throughout the test.