Title :
Noise properties in SiGe BiCMOS devices
Author :
Tartarin, J.G. ; Plana, R. ; Borgarino, M. ; Lafontaine, H. ; Regis, M. ; Llopis, O. ; Kovacic, S.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
6/21/1905 12:00:00 AM
Abstract :
This paper deals with the investigation of the noise properties of a commercially available SiGe BiCMOS technology. We present some results related with the high frequency noise behavior of these devices and we defined some geometrical rules allowing the design of low noise amplifier. Concerning their low frequency noise performances, the devices exhibit 1/f noise source with an excess corner noise frequency in the 1 kHz range which is close to the state of the art for a monolithic technology. We further developed a scaleable non linear low frequency noise model implementable in a commercial microwave software. Finally, additional residual phase noise measurements confirmed the impressive capabilities of SiGe HBT technology for low noise RF applications
Keywords :
1/f noise; BiCMOS integrated circuits; electric noise measurement; germanium compounds; microwave amplifiers; phase noise; semiconductor device models; semiconductor device noise; silicon compounds; 1 kHz; 1 to 12 GHz; 1/f noise source; 40 GHz; SiGe; SiGe BiCMOS devices; SiGe HBT; commercial microwave software; excess corner noise frequency; geometrical rules; high frequency noise; low noise RF applications; low noise amplifier; monolithic technology; noise properties; residual phase noise measurements; scaleable nonlinear low frequency noise model; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Low-frequency noise; Low-noise amplifiers; Microwave devices; Noise measurement; Phase measurement; Phase noise; Silicon germanium;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821473
