Observations on the nonlinear behaviour of single and double InGaP/GaAs HBTs

Author

Webster, D.R. ; Rezazadeh, A. ; Sotoodeh, M. ; Khalid, A. ; Hu, Z. ; Hutabarat, M.T. ; Ataei, G.R. ; Haigh, D.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

158

Lastpage

163

Abstract

This paper explores the bias and voltage gain dependence of the small signal intermodulation distortion performance of the single and double InGaP HBT. It was found that the HBT has a zero in its 3rd order intermodulation distortion at low collector currents caused by the emitter resistance. The collector current at which this occurs can be approximately calculated with a simple formula. The small signal intermodulation distortion was little affected by collector voltage or voltage gain. There was very little difference between the small signal intermodulation distortion performance of the single and double HBT. Through a Volterra analysis it is demonstrated that the zero in 3rd order intermodulation distortion can be moved to a higher collector current by reducing emitter resistance

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; nonlinear distortion; InGaP-GaAs; Volterra analysis; double HBT; nonlinearity; single HBT; small-signal intermodulation distortion; Distortion measurement; Educational institutions; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Intermodulation distortion; Microwave measurements; Testing; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821478

Filename

821478