DocumentCode
1590891
Title
Integrated 2.4 GHz class-E CMOS power amplifier
Author
Saari, Ville ; Juurakko, Pasi ; Ryynänen, Jussi ; Halonen, Kari
Author_Institution
Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland
fYear
2005
Firstpage
645
Lastpage
648
Abstract
An integrated two-stage class-E power amplifier operating at the 2.4 GHz frequency range is described. The implemented power amplifier is capable of providing 21.3 dBm output power with power added efficiency of 40 % and gain of 14.3 dB at 2.4 GHz. The drain efficiency of the class-E power stage is 55 % at 21.3 dBm power. The power amplifier uses 3.3 V supply voltage and was fabricated with 0.18 μm CMOS technology. The linear gain is 23.8 dB and the chip area 0.43 mm2.
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; electric potential; integrated circuit design; 0.18 micron; 14.3 dB; 2.4 GHz; 23.8 dB; 3.3 V; chip area; class-E CMOS power amplifier; drain efficiency; linear gain; power added efficiency; supply voltage; two-stage class-E power amplifier; CMOS technology; Capacitors; Circuits; High power amplifiers; Power amplifiers; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-8983-2
Type
conf
DOI
10.1109/RFIC.2005.1489896
Filename
1489896
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