• DocumentCode
    159284
  • Title

    Pockels effect study in strained silicon Mach-Zenhder interferometer

  • Author

    Damas, Pedro ; Le Roux, X. ; Le Bourdais, David ; Cassan, Eric ; Marris-Morini, D. ; Izard, Nicolas ; Maillard, Franccois ; Maroutian, Thomas ; Lecoeur, Philippe ; Vivien, L.

  • Author_Institution
    Inst. d´E lectronique Fondamentale, Univ. Paris Sud, Orsay, France
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    243
  • Lastpage
    244
  • Abstract
    We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.
  • Keywords
    Mach-Zehnder interferometers; Pockels effect; elemental semiconductors; nonlinear optical susceptibility; silicon; NIR range; Pockels effect; Si; second order nonlinear optical susceptibility; strained silicon Mach-Zenhder Interferometer; wavelength 1.3 mum to 1.63 mum; wavelength dependence; Electrooptical waveguides; Modulation; Silicon photonics; Strain; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961945
  • Filename
    6961945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159284