Correlation study between doping technique towards diffusion rate and oxidation rate

Author

Zoolfakar, A.S. ; Zulkefle, H. ; Zakaria, A. ; Manut, A. ; Abdul Aziz, Azlan ; Zolkapli, M.

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2010

Firstpage

187

Lastpage

191

Abstract

This paper is to investigate correlation between doping technique towards diffusion rate and oxide growth rate. There are two types of doping technique that has been investigated such as Solid Source, SS and Spin on Dopant, SOD. Four inches wafers were used to investigate the effects of doping technique towards diffusion rate and oxidation rate. The resistivity of silicon substrate is measured by using 4-point probe while the oxide thickness is measured by an Ellipsometer. From this experiment, it can be concluded that diffusion rate of Solid Source is about 86% better than Spin on Dopand. While the oxide growth of Solid Source, SS is 3.6% better than Spin on Dopant.

Keywords

diffusion; ellipsometers; oxidation; semiconductor doping; 4-point probe; Ellipsometer; diffusion rate; doping technique; oxide growth rate; silicon substrate resistivity; solid source; spin on dopant; wafers; Annealing; Boron; Conductivity; Doping; Fabrication; Oxidation; Silicon; Solids; Substrates; Temperature; Solid Source (SS); Spin on Dopant (SOD); concentration; diffusion; oxide thickness; resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-6608-5

Type

conf

DOI

10.1109/SMELEC.2010.5549541

Filename

5549541