Electro-thermal method for semiconductor power losses analysis under different modulation schemes

Author

Ji, Baojian ; Chen, Luo-nan ; Cao, W.P. ; Zhang, M. ; Pickert, Volker

Author_Institution

Sch. of Electr. & Electron. Eng., Newcastle Univ., Newcastle upon Tyne, UK

fYear

2014

fDate

8-10 April 2014

Firstpage

1

Lastpage

5

Abstract

This paper presents methods for determining power loss profiles of Si-IGBT-based H-bridge inverters in motor drives. A comparison of inverter losses with commonly used PWM schemes including Bipolar and Unipolar PWMs is presented. Power losses were decomposed into switching and conduction losses to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by an electro-thermal model and the dynamic power loss is determined based on the time-domain voltage, current and junction temperature using pre-calibrated look-up table.

Keywords

PWM invertors; elemental semiconductors; insulated gate bipolar transistors; silicon; time-domain analysis; IGBT junction temperature; Si; bipolar PWM; conduction losses; electrothermal method; inverter loss; modulation scheme; motor drives; precalibrated look-up table; semiconductor power losses analysis; silicon-IGBT-based H-bridge inverter; switching losses; time-domain voltage; unipolar PWM; Converter; PWM; power loss; temperature control; thermal management;

fLanguage

English

Publisher

iet

Conference_Titel

Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on

Conference_Location

Manchester

Electronic_ISBN

978-1-84919-815-8

Type

conf

DOI

10.1049/cp.2014.0289

Filename

6836996