DocumentCode
1593552
Title
Computer simulation of anisotropic crystal etching
Author
Sequin, C.H.
Author_Institution
California Univ., Berkeley, CA, USA
fYear
1991
Firstpage
801
Lastpage
806
Abstract
The geometrical shapes resulting from anisotropic etching of crystalline substances are investigated. A simulator has been built that constructs boundary representations of the polyhedral models of such shapes starting from an etch rate polar diagram. Special attention is given to situations in which new faces emerge that were not previously present.<>
Keywords
electronic engineering computing; etching; integrated circuit technology; physics computing; semiconductor technology; anisotropic crystal etching; boundary representations; computer simulation; etch rate polar diagram; geometrical shapes; micromachining; polyhedral models; Anisotropic magnetoresistance; Computational geometry; Computational modeling; Computer science; Computer simulation; Crystallization; Etching; Gratings; Shape; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.149005
Filename
149005
Link To Document