• DocumentCode
    159372
  • Title

    Modulation depth enhancement in Si quantum dot doped SiOx waveguide based free-carrier modulator by adding a ring resonator

  • Author

    Sheng-Pin Su ; Chung-Lun Wu ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    201
  • Lastpage
    202
  • Abstract
    The Si quantum dot doped SiOx waveguide based free-carrier absorption modulator with enhanced modulation depth from 52.5% to 63.5% is demonstrated by adding a ring resonator and inducing the electron-hole plasma to cause a resonance shift in the ring.
  • Keywords
    elemental semiconductors; optical modulation; optical resonators; optical waveguides; semiconductor quantum dots; silicon; silicon compounds; solid-state plasma; SiOx:Si; electron-hole plasma; modulation depth enhancement; quantum dot doped waveguide based free-carrier absorption modulator; resonance shift; ring resonator; Absorption; Modulation; Optical ring resonators; Optical waveguides; Probes; Silicon; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6961990
  • Filename
    6961990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159372