DocumentCode :
159377
Title :
Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction
Author :
Younghyun Kim ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
153
Lastpage :
154
Abstract :
Carrier-depletion strained SiGe optical modulators with a vertical p-n junction is numerically investigated. Due to the enhancement of the plasma dispersion effect in SiGe, SiGe0.3 modulator is predicted to exhibit 0.43 V-cm at -3 V.
Keywords :
Ge-Si alloys; numerical analysis; optical modulation; p-n junctions; semiconductor materials; SiGe; carrier-depletion strained optical modulators; plasma dispersion effect; vertical p-n junction; voltage -3 V; Optical device fabrication; Optical modulation; Optical waveguides; P-n junctions; Silicon; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
Type :
conf
DOI :
10.1109/Group4.2014.6961993
Filename :
6961993
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=159377
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