Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%

Author

Wirths, Stephan ; Geiger, Richard ; Ikonic, Zoran ; Tiedemann, Andreas T. ; Mussler, Gregor ; Hartmann, J.-M. ; Mantl, Siegfried ; Sigg, Hans ; Grutzmacher, D. ; Buca, Dan

Author_Institution

Peter Grunberg Inst. (PGI 9), Forschungszentrum Juelich, Grunberg, Germany

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

15

Lastpage

16

Abstract

We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm^-1 for partially relaxed and moderately doped Ge_0.88Sn_0.12.

Keywords

germanium alloys; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; tin alloys; GeSn; compressively strained alloys; epitaxial layer; high quality heterostructures; moderately doped alloys; partially relaxed alloys; photoluminescence measurements; Epitaxial growth; Lattices; Photoluminescence; Strain; Temperature measurement; Tin; Chemical Vapor Deposition; Germanium-Tin; Group IV alloys; Laser materials; Photoluminescence; Si photonics; low temperature epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2014 IEEE 11th International Conference on

Conference_Location

Paris

Print_ISBN

978-1-4799-2282-6

Type

conf

DOI

10.1109/Group4.2014.6962005

Filename

6962005