Title :
AlOx/AlGaAs technology for multi-plane integrated photonic devices
Author :
Calvez, S. ; Lafleur, G. ; Larrue, A. ; Calmon, P.-F. ; Arnoult, A. ; Gauthier-Lafaye, O. ; Almuneau, G.
Author_Institution :
LAAS, Toulouse, France
Abstract :
The III-V semiconductor /oxide technology has become the standard fabrication technique for Vertical-Cavity Surface-Emitting Lasers. Current research aims to further enhance the performance of these emitters and diversify the range of devices that can be made using this technology. In this paper, we present a new model of the oxidation process which includes the anisotropic behaviour observed during conventional lateral oxidation. Furthermore, we demonstrate that this technology can be used as an innovative method to make micro-disk resonators with vertically-coupled access waveguides, an approach which can be generalised to fabricate other types of multi-plane photonic devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; microcavity lasers; microdisc lasers; semiconductor lasers; surface emitting lasers; AlOx-AlGaAs; III-V semiconductor-oxide technology; anisotropic behaviour; conventional lateral oxidation; microdisk resonator; multiplane integrated photonic device; standard fabrication technique; vertical cavity surface emitting laser; vertically coupled access waveguide; Gallium arsenide; III-V semiconductor materials; Optical resonators; Oxidation; Photonics; Semiconductor waveguides; Vertical cavity surface emitting lasers; III–V semiconductor oxidation; anisotropy; microdisk resonators;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193701
