Design issues of direct conversion radio frequency receivers in SiGe technology

Author

Salmeh, Roghoyeh ; Maundy, Brent J. ; Johnston, Ronald H.

Author_Institution

Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada

Volume

1

fYear

2004

Firstpage

61

Abstract

The paper describes the design issues of direct conversion RF receivers for WLAN systems using SiGe technology. For direct conversion transceivers, SiGe BiCMOS technology offers a combination of enhanced RF performance with advanced silicon technology. Simulated performance parameters of an active direct down conversion mixer using SiGe BiCMOS MMIC technology are presented. The mixer functions at 5 GHz and draws only 10.2 mW from a 3 V supply. The overall conversion gain of the circuit is 8.5 dB.

Keywords

Ge-Si alloys; MMIC frequency convertors; MMIC mixers; integrated circuit design; radio receivers; transceivers; wireless LAN; 10.2 mW; 3 V; 5 GHz; 8.5 dB; BiCMOS technology; MMIC technology; SiGe; WLAN systems; active direct down conversion mixer; conversion gain; direct conversion RF receivers; direct conversion radiofrequency receivers; direct conversion transceivers; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Mixers; Paper technology; Radio frequency; Receivers; Silicon germanium; Transceivers; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2004. Canadian Conference on

ISSN

0840-7789

Print_ISBN

0-7803-8253-6

Type

conf

DOI

10.1109/CCECE.2004.1344958

Filename

1344958