Title :
Thin dielectric films grown by atomic layer deposition: Properties and applications
Author :
Campabadal, F. ; Rafi, J.M. ; Gonzalez, M.B. ; Zabala, M. ; Beldarrain, O. ; Acero, M.C. ; Duch, M.
Author_Institution :
Inst. de Microelectron. de Barcelona (IMB), Centro Nac. de Microelectron. (CNM), Barcelona, Spain
Abstract :
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.
Keywords :
alumina; annealing; atomic layer deposition; hafnium compounds; high-k dielectric thin films; micromechanical devices; Al2O3; Al2O3 films; HfO2; HfO2 films; MEMS; Si; atomic layer deposition; electrical characteristics; high-k dielectrics; limiting factors; material characteristics; post-deposition annealing effects; radiation detectors; thin dielectric films; Aluminum oxide; Atomic layer deposition; Dielectrics; Hafnium compounds; High K dielectric materials; Silicon; Surface treatment; A12O3; ALD; HfO2;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481327
