DocumentCode
1601966
Title
Laser induced single events in SRAMs
Author
Palomar, C. ; Lopez-Calle, I. ; Franco, F.J. ; Agapito, J.A. ; Izquierdo, J.G.
Author_Institution
Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain
fYear
2013
Firstpage
253
Lastpage
256
Abstract
This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
Keywords
SRAM chips; laser beam effects; radiation hardening (electronics); SRAM; error emulation; laser induced single events; pulsed laser; semiconductor memory; sensitivity map; space radiation; Microprocessors; Performance evaluation; Polymers; Radiation effects; Semiconductor lasers; Sensitivity; Laser; MCU; SEU; errors; memory; sensitivity map;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481390
Filename
6481390
Link To Document