• DocumentCode
    160230
  • Title

    Relationship between bonding conditions and strength for joints using a Au nanoporous sheet

  • Author

    Matsunaga, Kaori ; Kim, Min-Su ; Nishikawa, Hisashi ; Saito, Masato ; Mizuno, Jun

  • Author_Institution
    Dept. of Sustainable Energy & Environ. Eng., Osaka Univ., Suita, Japan
  • fYear
    2014
  • fDate
    16-18 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As the establishment of high-temperature lead-free solders and other interconnection technologies is an urgent priority in the electronics industry, a strong drive exists to find Pb-free alternatives for high-temperature bonding processes. We propose a no-solvent, no-flux solid-state bonding technique that uses a nanoporous sheet, a process we call nanoporous bonding (NPB). Nanoporous sheets can be made from binary alloys by selective dissolution of one element. In this study, Au nanoporous sheets were fabricated by dealloying a Au-Ag binary alloy with nitric acid. The effects of joining conditions on the shear strength of joints using this sheet were investigated. The joints bonded at 350 °C showed high shear strengths of above 20 MPa. It was found that joining using Au NPB was successfully achieved, and that NPB shows potential as a Pb-free interconnection material for high-temperature electronic applications.
  • Keywords
    bonding processes; gold; nanoporous materials; shear strength; silver; NPB; bonding condition; electronics industry; gold nanoporous sheet; gold-silver binary alloy; high-temperature bonding process; high-temperature electronic applications; high-temperature lead-free solders; interconnection technology; lead-free interconnection material; nanoporous bonding; nanoporous sheet; nitric acid; no-solvent no-flux solid-state bonding technique; selective element dissolution; shear strength; temperature 350 degC; Bonding; Gold; Joints; Ligaments; Nitrogen; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics System-Integration Technology Conference (ESTC), 2014
  • Conference_Location
    Helsinki
  • Type

    conf

  • DOI
    10.1109/ESTC.2014.6962855
  • Filename
    6962855