A comparison of quantum correction models for the three-dimensional simulation of FinFET structures

For the prediction of the device performance of FinFET structures, 3D device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the density-of-states in a pre-processing step and the other calculates a correction for the band edge energy, have been implemented in the device simulator Minimos-NT. The models have been applied to the simulation of double- and triple-gate FinFET structures. However, while the drive current reduction can be reproduced, the carrier concentration in the fin shows only poor agreement with rigorous quantum mechanical simulation.